Cyclotron Resonance Study of the Two-Dimensional Electron Layers and Double-Layers in Tilted Magnetic Fields

The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-layer systems can be realized in a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results are compared to experimental data.Comment: 4 pages, 6 figures, elsart/PHYEAUTH macros; presented on the EP2DS-15 Conference in Nara, Japan. To be published in Physica

Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in pres

Inter-layer Hall effect in double quantum wells subject to in-plane magnetic fields

We report on a theoretical study of the transport properties of two coupled two-dimensional electron systems subject to in-plane magnetic fields. The charge redistribution in double wells induced by the Lorenz force in crossed electric and magnetic fields has been studied. We have found that the redistribution of the charge and the related inter-layer Hall effect originate in the chirality of diamagnetic currents and give a substantial contribution to the conductivity.Comment: 7 RevTex pages, 4 figures, appendix added and misprint in Eq. (11) correcte

Longitudinal conductivity and transverse charge redistribution in coupled quantum wells subject to in-plane magnetic fields

In double quantum wells electrons experience a Lorentz force oriented perpendicular to the structure plane when an electric current is driven perpendicular to the direction of an in-plane magnetic field. Consequently, the excess charge is accumulated in one of the wells. The polarization of a bilayer electron system and the corresponding Hall voltage are shown to contribute substantially to the in-plane conductivity.Comment: 3 pages, 2 figure

Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field

We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve.Comment: 3 pages, 3 figure

Cyclotron effective mass of 2D electron layer at GaAs/AlGaAs heterojunction subject to in-plane magnetic fields

We have found that Fermi contours of a two-dimensional electron gas at \rmGaAs/Al_xGa_{1-x}As interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measured by the cyclotron resonance in the far-infrared transmission spectra and by the thermal damping of Shubnikov-de Haas oscillations in tilted magnetic fields with an in-plane component up to 5 T. The observed increase of the cyclotron effective mass reaches almost 5 \% of its zero field value which is in good agreement with results of a self-consistent calculation.Comment: 4 pages, Revtex, figures can be obtained on request from [email protected]; to appear in Phys. Rev. B (in press). No changes, the corrupted submission replace

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure

In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage.Comment: 4 pages, 5 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan. Revised version. To appear in Physica

Magnetotransport with two occupied subbands in a Si(100) inversion layer

We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature damping of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samples with two occupied subbans exhibit a strong anomalous negative magnetoresitance, reaching $\rm \approx 25 \%$ of a zero field value at $B =$ 12 T. The resistance decrease is more pronounced for lower temperatures and higher electron concentrations. We explain this behaviour by an increase of the second subband mobility due to the freezing-out of the scattering of $0'$ electrons. Based on the measured periods of SdH oscillations, we conclude that the electrons are distributed inhomogeneously beneath the sample gate.Comment: 4 pages. RevTex text and 4 PostScript figures in a single tar-compressed file produced by 'uufiles